Total power dissipation as a function of average on-state current maximum valuesįig 2. The rate of rise of current should not exceed 15 A/µs.įig 1. Rate of rise of on-state current peak gate current peak gate voltage peak reverse gate voltage peak gate power average gate power storage temperature junction temperatureĪlthough not recommended, off-state voltages 800 V may be applied without damage, but the triac may switch to the on-state. Symbol VDRM VRRM IT(AV) IT(RMS) ITSM Parameter repetitive peak off-state voltage repetitive peak reverse voltage average on-state current RMS on-state current non-repetitive peak on-state current half sine wave Tlead 83 ☌ see Figure 1 all conduction angles see Figure 4 and 5 half sine wave 25 ☌ prior to surge see Figure 2 and ms I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Ordering information Package Name BT169D-L TO-92 Description plastic single-ended leaded (through hole) package 3 leads Version SOT54 Type number Pin 2 3 Pinning Description anode (A) gate (G) cathode (K) I Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits Passivated sensitive gate thyristor a SOT54 plastic package.
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